Codice MOX 11 Titolo Numerical Simulation of Resonant Tunneling Diodes with a Quantum-Drift-Diffusion Model Data 2003-01-05 Autore/i Micheletti, Stefano; Sacco, Riccardo, Simioni, Riccardo Link Download full text Pubblicato Micheletti, S.; Sacco, R., Simioni, R., Numerical Simulation of Resonant Tunneling Diodes with a Quantum-Drift-Diffusion Model, Sci. Comp. in Elect. Eng. Springer-Verlag series: Mathematics in Industry, Eds: W.H.A. Schilders, et al., pp. 313-320, 2004 Abstract We deal with a Quantum-Drift-Diffusion (QDD) model for the description of transport in semiconductors which generalizes the standard Drift-Diffusion model (DD) through extra terms that take into account some quantum dispersive corrections. We also study numerically the influence on the I-V curve of the electron effective mass, the barrier height width, and of the ambient temperature. The performance of several linearization algorithms, i.e. a two Gummel-type iteractions and the fully-coupled Newton method are also compared.